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| SI3455DV vishay siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-56944erev. d, 23-nov-98 siliconix was formerly a division of temic semiconductors 1-1 p-channel 30-v (d-s) mosfet 30 0.100 @ v gs = 10 v 3.5 30 0.190 @ v gs = 4.5 v 2.5 (4) s (3) g (1, 2, 5, 6) d p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 3.5 continuous drain current (t j = 150 c) a t a = 70 c i d 2.7 a pulsed drain current i dm 20 continuous source current (diode conduction) a i s 1.7 maximum power dissi p ation a t a = 25 c p d 2.0 w maximum power dissi ation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 5 sec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70194. vishay siliconix SI3455DV vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-56944erev. d, 23-nov-98 siliconix was formerly a division of temic semiconductors 1-2 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 70 c 5 a on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 15 a drain source on state resistance a r v gs = 10 v, i d = 3.5 a 0.080 0.100 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 2.5 a 0.134 0.190 forward transconductance a g fs v ds = 15 v, i d = 3.5 a 4.0 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 1.2 v total gate charge q g 5.1 10 gate-source charge q gs v ds = 10 v, v gs = 10 v, i d = 3.5 a 1.5 nc gate-drain charge q gd 1.0 turn-on delay time t d(on) 10 20 rise time t r v dd = 10 v, r l = 10 15 30 turn-off delay time t d(off) dd l i d 1 a, v gen = 10 v, r g = 6 20 35 ns fall time t f 10 20 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI3455DV vishay siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-56944erev. d, 23-nov-98 siliconix was formerly a division of temic semiconductors 1-3 0 4 8 12 16 20 01234 0 2 4 6 8 10 0 1.5 3.0 4.5 6.0 0.7 0.85 1.00 1.15 1.30 1.45 1.60 50 25 0 25 50 75 100 125 150 0 0.06 0.12 0.18 0.24 0.30 0 4 8 12 16 20 20 100 180 260 340 420 500 580 0 6 12 18 24 30 0 4 8 12 16 20 01234567 '&#'& $&$ %& % $!% $ $&$ %& % & $ !)% %&! (% $ ! '$$!& v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7 v 5 v 3 v v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss on-resistance ( r ds(on) ) i d drain current (a) # &! !)% %&! (% '!& "! #$&'$ v gs = 10 v i d = 3.5 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v 4 v 6 v v gs = 4.5 v v ds = 15 v i d = 3.5 a t c = 55 c 125 c 25 c vishay siliconix SI3455DV vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-56944erev. d, 23-nov-98 siliconix was formerly a division of temic semiconductors 1-4 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 ',) 0 ) #& #' '). ) '$+ ! &0 *#*+ & -* + 0+'0',) '$+ ! ") *"'$ '$+ ! #&!$ ,$* '. ) ')% $#/ " )% $ ) &*# &+ %( & ,& +#'&0+'0% # &+ square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0 0.08 0.16 0.24 0.32 0.40 0246810 0.3 0.15 0.00 0.15 0.30 0.45 0.60 50 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 3.5 a i d = 250 a variance (v) v gs(th) 20 10 1 0 6 12 18 24 30 0.01 0.10 1.00 10.00 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm |
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